A Partow Technologies LLC., Wafers Bonding System developed and manufactured by 3D Dynamics now on market available for orders.
Room Temperature Wafers Bonding System
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Home designed plasma assisted UHV vacuum system for wafer bonding
Surface of wafers are activated using plasma source in the high vacuum chamber
Wafers are pressed inside the vacuum
Active atoms on the surface of wafers diffuse and form an atomic diffusion bond
Bond strength is so high that it is impossible to separate the wafers without breakage
Materials with different thermal expansion coefficients can bond to each other since no heating is required
Brittle materials such as InP or GaAs can bond to Silicon or other materials since no high forces are required
No intermediate layer is required so the bond interface is transparent to light and heat.
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Transparent optical bonding
Bonding of photodetector and various optical elements on different substrates
Wafer level packaging
MEMS encapsulation and device fabrication
Functional wafer fabrication such as lithium niobate thin films on Silicon
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No intermediate layers
No heating is required
No high force or high pressure is required
Very strong bond higher than yield strength of many materials is obtained
Dissimilar wafer bonding up to 4″ wafers
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GaAs, LiNbO3, Quartz, Silicon, GaN, Germanium, Saphire
Metal to metal surface bonding
Oxide to metal bonding
Semiconductor to semiconductor bonding
Semiconductor to oxide bonding
Oxide to oxide bonding
